标题: | High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO |
作者: | Hsu, Hsiao-Hsuan Chang, Chun-Yen Cheng, Chun-Hu Chiou, Shan-Haw Huang, Chiung-Hui 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | TiO2;indium-gallium-zinc oxide (IGZO);thin-film transistor (TFT);mobility;gettering |
公开日期: | 1-一月-2014 |
摘要: | We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of <2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 x 10(-11) A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm(2)/Vs, which may create the potential application for high resolution display. |
URI: | http://dx.doi.org/10.1109/LED.2013.2290707 http://hdl.handle.net/11536/23385 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2013.2290707 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 35 |
Issue: | 1 |
起始页: | 87 |
结束页: | 89 |
显示于类别: | Articles |
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