High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO

標題:	High Mobility Bilayer Metal-Oxide Thin Film Transistors Using Titanium-Doped InGaZnO
作者:	Hsu, Hsiao-Hsuan Chang, Chun-Yen Cheng, Chun-Hu Chiou, Shan-Haw Huang, Chiung-Hui 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	TiO2;indium-gallium-zinc oxide (IGZO);thin-film transistor (TFT);mobility;gettering
公開日期:	1-一月-2014
摘要:	We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of <2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 x 10(-11) A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm(2)/Vs, which may create the potential application for high resolution display.
URI:	http://dx.doi.org/10.1109/LED.2013.2290707 http://hdl.handle.net/11536/23385
ISSN:	0741-3106
DOI:	10.1109/LED.2013.2290707
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	35
Issue:	1
起始頁:	87
結束頁:	89
顯示於類別：	期刊論文

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