標題: | Evolution of the conductivity type in germania by varying the stoichiometry |
作者: | Islamov, D. R. Gritsenko, V. A. Cheng, C. H. Chin, A. 交大名義發表 National Chiao Tung University |
公開日期: | 2-Dec-2013 |
摘要: | Information regarding the conductivity type of Si/GeOx/Ni structures with various stoichiometry has been obtained using experiments on injection of minority carriers from n- and p-type silicon. Results show that non-stoichiometric GeOx films exhibit bipolar conductivity, that is, holes as well as electrons contribute to the charge transport. Stoichiometric GeO2 films exhibit unipolar electron conductivity. (C) 2013 AIP Publishing LLC. |
URI: | http://dx.doi.org/10.1063/1.4838297 http://hdl.handle.net/11536/23420 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4838297 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 103 |
Issue: | 23 |
結束頁: | |
Appears in Collections: | Articles |
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