標題: Electrooptical Properties of InGaAs/GaAs Strained Single Quantum Wells
作者: Lu, Chien-Rong
Lou, Shry-Fong
Cheng, Hung-Hsiang
Lee, Chien-Ping
Tsai, Fu-Yi
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: photoreflectance;strained single quantum wells;piezoelectric field;Franz-Keldysh oscillations
公開日期: 2000
摘要: The electrooptical properties of (100) and (111)B InGaAs/GaAs strained single quantum wells have been studied by the photoreflectance spectroscopy at various temperatures and under different biases. There is a Si delta-doping sheet under the GaAs surface to screen the surface built-in electric field from the quantum well. The spectral features consist of the excitonic interband transitions in the quantum well, and the Franz-Keldysh oscillations from the band edge transitions of the GaAs barrier near the surface. The piezoelectric field tilts the (111)B single quantum well toward the Si delta-doping and causes subband filling by the electrons from the delta-doping centers. With a proper external bias to repel electrons from the tilted quantum well, the excitonic interband transition in the (111)B system is enhanced.
URI: http://hdl.handle.net/11536/24950
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 39
Issue: 1
起始頁: 351
結束頁: 352
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