標題: Built-in Effective Body-Bias Effect in Ultra-Thin-Body Hetero-Channel III-V-on-Insulator n-MOSFETs
作者: Yu, Chang-Hung
Su, Pin
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
關鍵字: Ultra-thin-body (UTB);III-V;hetero-channel;drain-induced-barrier-lowering (DIBL);electrostatic integrity (EI)
公開日期: 1-Aug-2014
摘要: This letter reports a built-in effective body-bias effect in ultra-thin-body (UTB) hetero-channel III-V-on-insulator n-MOSFETs. This effect results from the discrepancies in electron affinity and the effective density-of-states of conduction band between the III-V and conventional Si channels. Our study indicates that, in addition to permittivity, it is the built-in effective body-bias effect that determines the drain-induced-barrier-lowering characteristics of the hetero-channel devices. This intrinsic effect has to be considered when one-to-one comparisons among various UTB hetero-channel MOSFETs regarding the electrostatic integrity are made.
URI: http://dx.doi.org/10.1109/LED.2014.2328628
http://hdl.handle.net/11536/25227
ISSN: 0741-3106
DOI: 10.1109/LED.2014.2328628
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 35
Issue: 8
起始頁: 823
結束頁: 825
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