標題: | CF4 plasma treatment for fabricating high-performance and reliable solid-phase-crystallized poly-Si TFTs |
作者: | Wang, SD Lo, WH Lei, TF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2005 |
摘要: | A CF4 plasma treatment on solid-phase-crystallized (SPC) poly-Si thin-film transistors ( TFTs ) has been demonstrated. Using this technique, fluorine atoms can be introduced into the poly-Si film to passivate the defects, and hence, the device performance of the SPC poly-Si TFTs can be significantly improved. The fluorinated SPC poly- Si TFTs exhibit a good subthreshold slope, low threshold voltage, and high field effect mobility. Moreover, the fluorinated SPC poly- Si TFTs also exhibit an improved hot-carrier-stress immunity, which is due to the strong Si-F bonds formed in the poly-Si channel region. (c) 2005 The Electrochemical Society. |
URI: | http://hdl.handle.net/11536/25442 http://dx.doi.org/10.1149/1.1955166 |
ISSN: | 0013-4651 |
DOI: | 10.1149/1.1955166 |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 152 |
Issue: | 9 |
起始頁: | G703 |
結束頁: | G706 |
顯示於類別: | 期刊論文 |