標題: CF4 plasma treatment for fabricating high-performance and reliable solid-phase-crystallized poly-Si TFTs
作者: Wang, SD
Lo, WH
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2005
摘要: A CF4 plasma treatment on solid-phase-crystallized (SPC) poly-Si thin-film transistors ( TFTs ) has been demonstrated. Using this technique, fluorine atoms can be introduced into the poly-Si film to passivate the defects, and hence, the device performance of the SPC poly-Si TFTs can be significantly improved. The fluorinated SPC poly- Si TFTs exhibit a good subthreshold slope, low threshold voltage, and high field effect mobility. Moreover, the fluorinated SPC poly- Si TFTs also exhibit an improved hot-carrier-stress immunity, which is due to the strong Si-F bonds formed in the poly-Si channel region. (c) 2005 The Electrochemical Society.
URI: http://hdl.handle.net/11536/25442
http://dx.doi.org/10.1149/1.1955166
ISSN: 0013-4651
DOI: 10.1149/1.1955166
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 152
Issue: 9
起始頁: G703
結束頁: G706
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