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dc.contributor.authorChan, Men_US
dc.contributor.authorSu, Pen_US
dc.contributor.authorWan, Hen_US
dc.contributor.authorLin, CHen_US
dc.contributor.authorFung, SKHen_US
dc.contributor.authorNiknejad, AMen_US
dc.contributor.authorHu, CMen_US
dc.contributor.authorKo, PKen_US
dc.date.accessioned2014-12-08T15:39:00Z-
dc.date.available2014-12-08T15:39:00Z-
dc.date.issued2004-06-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2003.12.012en_US
dc.identifier.urihttp://hdl.handle.net/11536/26704-
dc.description.abstractThis paper describes a unified framework to model the floating-body effects of various SOI MOSFET operation modes, including body-contacted mode, partially depleted mode and fully depleted mode. As the operation mode is dimension and bias dependent, different modes can co-exist in a single SOI technology. A smooth transit from one type of operation mode to another is thus essential and has been included in the model. In addition, the floating-body effects can couple to a number of other SOI specific phenomena such as heating assisted impact ionization, gate tunneling induced dynamic behavior, and operation mode dependent small signal output resistance. A methodology to model the overall SOI MOSFET behavior due to the combination of multiple floating-body related effects will also be described. (C) 2004 Published by Elsevier Ltd.en_US
dc.language.isoen_USen_US
dc.subjectSOIen_US
dc.subjectSOI devicesen_US
dc.subjectcircuit simulationen_US
dc.subjectdevice modelen_US
dc.subjectSPICEen_US
dc.subjectBSIMSOIen_US
dc.titleModeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2003.12.012en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume48en_US
dc.citation.issue6en_US
dc.citation.spage969en_US
dc.citation.epage978en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000220419600013-
dc.citation.woscount15-
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