完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chan, M | en_US |
dc.contributor.author | Su, P | en_US |
dc.contributor.author | Wan, H | en_US |
dc.contributor.author | Lin, CH | en_US |
dc.contributor.author | Fung, SKH | en_US |
dc.contributor.author | Niknejad, AM | en_US |
dc.contributor.author | Hu, CM | en_US |
dc.contributor.author | Ko, PK | en_US |
dc.date.accessioned | 2014-12-08T15:39:00Z | - |
dc.date.available | 2014-12-08T15:39:00Z | - |
dc.date.issued | 2004-06-01 | en_US |
dc.identifier.issn | 0038-1101 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.sse.2003.12.012 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/26704 | - |
dc.description.abstract | This paper describes a unified framework to model the floating-body effects of various SOI MOSFET operation modes, including body-contacted mode, partially depleted mode and fully depleted mode. As the operation mode is dimension and bias dependent, different modes can co-exist in a single SOI technology. A smooth transit from one type of operation mode to another is thus essential and has been included in the model. In addition, the floating-body effects can couple to a number of other SOI specific phenomena such as heating assisted impact ionization, gate tunneling induced dynamic behavior, and operation mode dependent small signal output resistance. A methodology to model the overall SOI MOSFET behavior due to the combination of multiple floating-body related effects will also be described. (C) 2004 Published by Elsevier Ltd. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | SOI | en_US |
dc.subject | SOI devices | en_US |
dc.subject | circuit simulation | en_US |
dc.subject | device model | en_US |
dc.subject | SPICE | en_US |
dc.subject | BSIMSOI | en_US |
dc.title | Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.sse.2003.12.012 | en_US |
dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
dc.citation.volume | 48 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 969 | en_US |
dc.citation.epage | 978 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000220419600013 | - |
dc.citation.woscount | 15 | - |
顯示於類別: | 期刊論文 |