標題: A BENDING N-WELL BALLAST LAYOUT TO IMPROVE ESD ROBUSTNESS IN FULLY-SILICIDED CMOS TECHNOLOGY
作者: Wen, Yong-Ru
Ker, Ming-Dou
Chen, Wen-Yi
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2010
摘要: Ballast technique has been reported as a cost effective method to improve ESD robustness of fully-silicided devices without using silicide block. In this work, a new ballast technique, the bending N-Well (BNW) ballast structure, is proposed to enhance ESD robustness of fully-silicided NMOS. With a deep N-Well to cover the fully-silicided NMOS with BNW ballast structure, ESD robustness of the NMOS can be further improved by enhancing the turn-on uniformity among the multi-fingers of the NMOS.
URI: http://hdl.handle.net/11536/26931
http://dx.doi.org/10.1109/IRPS.2010.5488718
ISBN: 978-1-4244-5431-0
DOI: 10.1109/IRPS.2010.5488718
期刊: 2010 INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM
起始頁: 857
結束頁: 860
顯示於類別:會議論文


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