Memory effect of oxide/SiC : O/oxide sandwiched structures

doi:10.1063/1.1675924

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DC Field	Value	Language
dc.contributor.author	Chang, TC	en_US
dc.contributor.author	Yan, ST	en_US
dc.contributor.author	Yang, FM	en_US
dc.contributor.author	Liu, PT	en_US
dc.contributor.author	Sze, SM	en_US
dc.date.accessioned	2014-12-08T15:39:27Z	-
dc.date.available	2014-12-08T15:39:27Z	-
dc.date.issued	2004-03-22	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1675924	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26940	-
dc.description.abstract	The memory effects of the oxide/oxygen-incorporated silicon carbide (SiC:O)/oxide sandwiched structure were investigated. The memory window is decreased with the increase of the oxygen content in the SiC:O film due to the reduction of dangling bonds. A concise model is proposed to explain the reduction of dangling bonds with increasing oxygen content. Also, a higher breakdown voltage is observed with less oxygen content in the SiC:O film, which is attributed to the high barrier height induced by electron trapping in the SiC:O film. (C) 2004 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Memory effect of oxide/SiC : O/oxide sandwiched structures	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1675924	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	84	en_US
dc.citation.issue	12	en_US
dc.citation.spage	2094	en_US
dc.citation.epage	2096	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000220268500028	-
dc.citation.woscount	6	-
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