High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers

doi:10.1016/j.sse.2003.07.004

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Kuo, HC	en_US
dc.contributor.author	Chang, YS	en_US
dc.contributor.author	Lai, FY	en_US
dc.contributor.author	Hseuh, TH	en_US
dc.contributor.author	Chu, LT	en_US
dc.contributor.author	Laih, LH	en_US
dc.contributor.author	Wang, SC	en_US
dc.date.accessioned	2014-12-08T15:39:31Z	-
dc.date.available	2014-12-08T15:39:31Z	-
dc.date.issued	2004-03-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.sse.2003.07.004	en_US
dc.identifier.uri	http://hdl.handle.net/11536/26973	-
dc.description.abstract	In this paper, we report a high speed performance of silicon-implanted vertical surface emitting lasers (VCSELs) with the aperture size 6x6 mum(2). These VCSELs exhibit kink-free current-light output with threshold currents similar to1.14 mA, and the slope efficiencies similar to0.5 W/A. The eye diagram of VCSEL operating at 10 Gb/s with 6 mA bias and 6 dB extinction ratio shows very clean eye. The rise time is 29 ps and fall time is 41 ps with jitter (p-p) = 21 ps. We have accumulated life test data up to 1000 h at 70 degreesC/10 mA. (C) 2003 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	VCSEL	en_US
dc.subject	Si implant	en_US
dc.subject	implantation-induced disorder	en_US
dc.subject	high speed	en_US
dc.title	High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.sse.2003.07.004	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	48	en_US
dc.citation.issue	3	en_US
dc.citation.spage	483	en_US
dc.citation.epage	485	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000188117500015	-
dc.citation.woscount	1	-
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