High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers

標題:	High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasers
作者:	Kuo, HC Chang, YS Lai, FY Hseuh, TH Chu, LT Laih, LH Wang, SC 光電工程學系 Department of Photonics
關鍵字:	VCSEL;Si implant;implantation-induced disorder;high speed
公開日期:	1-三月-2004
摘要:	In this paper, we report a high speed performance of silicon-implanted vertical surface emitting lasers (VCSELs) with the aperture size 6x6 mum(2). These VCSELs exhibit kink-free current-light output with threshold currents similar to1.14 mA, and the slope efficiencies similar to0.5 W/A. The eye diagram of VCSEL operating at 10 Gb/s with 6 mA bias and 6 dB extinction ratio shows very clean eye. The rise time is 29 ps and fall time is 41 ps with jitter (p-p) = 21 ps. We have accumulated life test data up to 1000 h at 70 degreesC/10 mA. (C) 2003 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.sse.2003.07.004 http://hdl.handle.net/11536/26973
ISSN:	0038-1101
DOI:	10.1016/j.sse.2003.07.004
期刊:	SOLID-STATE ELECTRONICS
Volume:	48
Issue:	3
起始頁:	483
結束頁:	485
顯示於類別：	期刊論文

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