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dc.contributor.authorKuo, HCen_US
dc.contributor.authorChang, YSen_US
dc.contributor.authorLai, FYen_US
dc.contributor.authorHseuh, THen_US
dc.contributor.authorChu, LTen_US
dc.contributor.authorLaih, LHen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:39:31Z-
dc.date.available2014-12-08T15:39:31Z-
dc.date.issued2004-03-01en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.sse.2003.07.004en_US
dc.identifier.urihttp://hdl.handle.net/11536/26973-
dc.description.abstractIn this paper, we report a high speed performance of silicon-implanted vertical surface emitting lasers (VCSELs) with the aperture size 6x6 mum(2). These VCSELs exhibit kink-free current-light output with threshold currents similar to1.14 mA, and the slope efficiencies similar to0.5 W/A. The eye diagram of VCSEL operating at 10 Gb/s with 6 mA bias and 6 dB extinction ratio shows very clean eye. The rise time is 29 ps and fall time is 41 ps with jitter (p-p) = 21 ps. We have accumulated life test data up to 1000 h at 70 degreesC/10 mA. (C) 2003 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectVCSELen_US
dc.subjectSi implanten_US
dc.subjectimplantation-induced disorderen_US
dc.subjecthigh speeden_US
dc.titleHigh speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.sse.2003.07.004en_US
dc.identifier.journalSOLID-STATE ELECTRONICSen_US
dc.citation.volume48en_US
dc.citation.issue3en_US
dc.citation.spage483en_US
dc.citation.epage485en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000188117500015-
dc.citation.woscount1-
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