High reflectivity distributed Bragg reflectors for 1.55 mu m VCSELs using InP/airgap

標題:	High reflectivity distributed Bragg reflectors for 1.55 mu m VCSELs using InP/airgap
作者:	Tsai, JY Lu, TC Wang, SC 光電工程學系 Department of Photonics
關鍵字:	DBR;VCSEL;reflectivity
公開日期:	1-Oct-2003
摘要:	A high reflecting InP/airgap distributed Bragg reflector (DBR) using InGaAs as sacrificial layers is demonstrated. The 3-pair InP/airgap DBR is formed by etching the InGaAs layers of the MOCVD grown InP/InGaAs structure using H2SO4 solution. A rigid and stable InP/airgap DBR with a peak reflectivity of 99.9% at 1.54 mum and a stopband width of about 200 nm is achieved. (C) 2003 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/S0038-1101(03)00144-8 http://hdl.handle.net/11536/27478
ISSN:	0038-1101
DOI:	10.1016/S0038-1101(03)00144-8
期刊:	SOLID-STATE ELECTRONICS
Volume:	47
Issue:	10
起始頁:	1825
結束頁:	1828
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.