標題: Latchup-free ESD protection design with complementary substrate-triggered SCR devices
作者: Ker, MD
Hsu, KC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: complementary;electrostatic discharge (ESD);ESD protection circuit;silicon-controlled rectifier (SCR);substrate-triggered technique
公開日期: 1-Aug-2003
摘要: The turn-on mechanism of silicon-controlled rectifier (SCR) devices is essentially a current triggering event. While a current is applied to the base or substrate of an SCR device, it can be quickly triggered on into its latching state. In this paper, latchup-free electrostatic discharge (ESD) protection circuits which are combined with the substrate-triggered technique and an SCR device, are proposed. A complementary circuit style with the substrate-triggered SCR device is designed to discharge both the pad-to-V-SS and pad-to-V-DD ESD stresses. The novel complementary substrate-triggered SCR devices have the advantages of controllable switching voltage, adjustable holding voltage, faster turn-on speed, and compatible to general CMOS process without extra process modification such as the silicide-blocking mask and ESD implantation. The total holding voltage of the substrate-triggered SCR device can be linearly increased by adding the stacked diode string to avoid the transient-induced latchup issue in the ESD protection circuits. The on-chip ESD protection circuits designed with the proposed complementary substrate-triggered SCR devices and stacked diode string for the input/output pad and power pad have been successfully verified in a 0.25-mum salicided CMOS process with the human body model (machine model) ESD level of similar to7.25 kV (500 V) in a small layout area.
URI: http://dx.doi.org/10.1109/JSSC.2003.814434
http://hdl.handle.net/11536/27662
ISSN: 0018-9200
DOI: 10.1109/JSSC.2003.814434
期刊: IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume: 38
Issue: 8
起始頁: 1380
結束頁: 1392
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