標題: | Effective reduction of bowing in free-standing GaN by N-face regrowth with hydride vapor-phase epitaxy |
作者: | Chen, Kuei-Ming Huang, Hsin-Hsiung Kuo, Yi-Lin Wu, Pei-Lun Chu, Ting-Li Yu, Hung-Wei Lee, Wei-I 電子物理學系 Department of Electrophysics |
關鍵字: | Free-standing GaN;HVPE;Nitrides;GaN |
公開日期: | 1-五月-2009 |
摘要: | Free-standing GaN films prepared with hydride vapor-phase epitaxy (HVPE) technique usually show bowing resulting from the high densities of defects near the N-polar face after separation from the original substrates. To solve the problem, a simple technique has been developed. A GaN layer was regrown on the N-polar face of the free-standing GaN by HVPE. High-resolution X-ray diffraction (HRXRD) measurements were performed to compare the bowings among GaN films before laser lift-off (LLO), after LLO, and after regrowth. The apparent reductions of XRD full-width at half-maximum (FWHM), along with the increase of XRD peak intensity, after regrowth clearly demonstrate the effectiveness of this method to eliminate bowings of the free-standing GaN films. (C) 2009 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.jcrysgro.2009.01.073 http://hdl.handle.net/11536/27698 |
ISSN: | 0022-0248 |
DOI: | 10.1016/j.jcrysgro.2009.01.073 |
期刊: | JOURNAL OF CRYSTAL GROWTH |
Volume: | 311 |
Issue: | 10 |
起始頁: | 3037 |
結束頁: | 3039 |
顯示於類別: | 會議論文 |