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dc.contributor.authorKuo, HCen_US
dc.contributor.authorChang, YSen_US
dc.contributor.authorLai, FYen_US
dc.contributor.authorHsueh, THen_US
dc.contributor.authorLaih, LHen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:40:38Z-
dc.date.available2014-12-08T15:40:38Z-
dc.date.issued2003-07-10en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:20030672en_US
dc.identifier.urihttp://hdl.handle.net/11536/27719-
dc.description.abstractHigh performance 850 um InGaAsP/InGaP strain-compensated vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25 to 85degreesC.en_US
dc.language.isoen_USen_US
dc.titleHigh-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELsen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20030672en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume39en_US
dc.citation.issue14en_US
dc.citation.spage1051en_US
dc.citation.epage1053en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000184273400017-
dc.citation.woscount10-
Appears in Collections:Articles


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