標題: | A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-mu m CMOS technology |
作者: | Meng, CC Chiang, MH Wu, TH 電信工程研究所 Institute of Communications Engineering |
關鍵字: | CMOS;LNA;MOSFET amplifier |
公開日期: | 20-Jan-2003 |
摘要: | A 1.2-V fully integrated 0.35-mum inductively degenerated common source CMOS low-noise amplifier has been demonstrated at 2.4 GHz in this paper. A simple common source configuration can be operated at lower voltage and has lower output impedance when compared with a conventional high output impedance cascode LNA circuit topology. The input matching inductance, output matching inductance, and source degeneration inductance are integrated on a single chip. The fully integrated 2.4-GHz CMOS LNA has 5.27-dB power gain, 17-dB input return loss, 15413 output return loss, 4-dB noise figure, and -1-dBm IIPIdB and 8-dBm IIP3 at V-dd = 1.2 V and I-dd = 10 mA, respectively. (C) 2003 Wiley Periodicals, Inc. |
URI: | http://dx.doi.org/10.1002/mop.10699 http://hdl.handle.net/11536/28158 |
ISSN: | 0895-2477 |
DOI: | 10.1002/mop.10699 |
期刊: | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS |
Volume: | 36 |
Issue: | 2 |
起始頁: | 136 |
結束頁: | 139 |
Appears in Collections: | Articles |
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