Formation of Ni germano-silicide on single crystalline Si0.3Ge0.7/Si

標題:	Formation of Ni germano-silicide on single crystalline Si0.3Ge0.7/Si
作者:	Lin, CY Chen, WJ Lai, CH Chin, A Liu, J 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Co;Ni;SiGe;silicide
公開日期:	1-八月-2002
摘要:	We have studied the Ni and Co germano-silicide on Si0.3Ge0.7/Si. The Ni germano-silicide shows a low sheet resistance of 4-6 Omega/square on both P+N and N+P junctions, which is much smaller than Co germano-silicide. In addition, small junction leakage currents of 3 x 10(-8) A/cm(2) and 2 x 10(-7) A/cm(2) are obtained for Ni germano-silicide on P+ N and N+ P junctions, respectively. The good germano-silicide integrity is due to the relatively uniform thickness as observed by cross-sectional TEM.
URI:	http://dx.doi.org/10.1109/LED.2002.801288 http://hdl.handle.net/11536/28616
ISSN:	0741-3106
DOI:	10.1109/LED.2002.801288
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	23
Issue:	8
起始頁:	464
結束頁:	466
顯示於類別：	期刊論文

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