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dc.contributor.authorChang, SJen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorChen, CMen_US
dc.contributor.authorChou, JWen_US
dc.contributor.authorChao, TSen_US
dc.contributor.authorHuang, TYen_US
dc.date.accessioned2014-12-08T15:44:54Z-
dc.date.available2014-12-08T15:44:54Z-
dc.date.issued2000-09-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://hdl.handle.net/11536/30310-
dc.description.abstractThe effects of indium channel implant energy on short-channel effect (SCE) and narrow channel effect (NCE) were studied on NMOS devices down to 0.1 mu m channel length. An anomalous crossover in Vth roll-off curves was observed, for the first time, on indium-implanted splits with different implant energies. This intriguing finding, together with the observed reduction in reverse narrow channel effect (RNCE) and effective channel length with reducing indium implant energy, can be consistently explained by the suppression of transient enhanced diffusion (TED) of channel impurity due to indium deactivation.en_US
dc.language.isoen_USen_US
dc.subjectindiumen_US
dc.subjectSSRen_US
dc.titleAn anomalous crossover in Vth roll-off for indium-doped nMOSFETsen_US
dc.typeArticleen_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume21en_US
dc.citation.issue9en_US
dc.citation.spage457en_US
dc.citation.epage459en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000089132500013-
dc.citation.woscount3-
Appears in Collections:Articles


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