Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment

標題:	Robust ultrathin oxynitride dielectrics by NH3 nitridation and N2O RTA treatment
作者:	Pan, TM Lei, TF Chao, TS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-八月-2000
摘要:	In this paper, a method to grow robust ultrathin (E-OT = 28 Angstrom) oxynitride film with effective dielectric constant of 5.7 is proposed, Samples, nitridized by NH3 with additional N2O annealing, show excellent electrical properties in terms of very low bulk trap density, low trap generation rate, and high endurance in stressing. This novel dielectric appears to be very promising for future ULSI devices.
URI:	http://dx.doi.org/10.1109/55.852956 http://hdl.handle.net/11536/30377
ISSN:	0741-3106
DOI:	10.1109/55.852956
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	21
Issue:	8
起始頁:	378
結束頁:	380
顯示於類別：	期刊論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。