標題: | Ga0.5In0.5P barrier layer for wet oxidation of AlAs |
作者: | Lee, SC Lee, WI 電子物理學系 Department of Electrophysics |
關鍵字: | wet oxidation;AlAs;Ga0.5In0.5P;AlGaAs;GaAs;interface |
公開日期: | 1-五月-2000 |
摘要: | We study the stability of Ga0.5In0.5P acid Al0.4Ga0.6As barrier layers for wet thermal oxidation of AlAs on GaAs. Samples with a Ga0.5In0.5P or Al0.4Ga0.6As barrier layer are oxidized in a water vapor environment under various oxidation conditions. The results of photoluminescence and secondary-ion mass spectrometry (SIMS) depth profile measurements indicate that the Ga0.5In0.5P barrier layer is more stable than the Al0.4Ga0.6As layer at higher oxidation temperatures and longer periods of oxidation time. |
URI: | http://dx.doi.org/10.1143/JJAP.39.2583 http://hdl.handle.net/11536/30558 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.39.2583 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 39 |
Issue: | 5A |
起始頁: | 2583 |
結束頁: | 2584 |
顯示於類別: | 期刊論文 |