標題: Ga0.5In0.5P barrier layer for wet oxidation of AlAs
作者: Lee, SC
Lee, WI
電子物理學系
Department of Electrophysics
關鍵字: wet oxidation;AlAs;Ga0.5In0.5P;AlGaAs;GaAs;interface
公開日期: 1-五月-2000
摘要: We study the stability of Ga0.5In0.5P acid Al0.4Ga0.6As barrier layers for wet thermal oxidation of AlAs on GaAs. Samples with a Ga0.5In0.5P or Al0.4Ga0.6As barrier layer are oxidized in a water vapor environment under various oxidation conditions. The results of photoluminescence and secondary-ion mass spectrometry (SIMS) depth profile measurements indicate that the Ga0.5In0.5P barrier layer is more stable than the Al0.4Ga0.6As layer at higher oxidation temperatures and longer periods of oxidation time.
URI: http://dx.doi.org/10.1143/JJAP.39.2583
http://hdl.handle.net/11536/30558
ISSN: 0021-4922
DOI: 10.1143/JJAP.39.2583
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 39
Issue: 5A
起始頁: 2583
結束頁: 2584
顯示於類別:期刊論文


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