A dopant-related defect in Te-doped AlInP

標題:	A dopant-related defect in Te-doped AlInP
作者:	Wu, YR Sung, WJ Wen, TC Lee, SC Lee, WI 電子物理學系友訊交大聯合研發中心 Department of Electrophysics D Link NCTU Joint Res Ctr
關鍵字:	Te;AlInP;dopant;defect;deep level;DLTS;depth profile measurement
公開日期:	1-Aug-1999
摘要:	A deep level in Te-doped Al0.5In0.5P, grown by metal organic chemical vapor deposition, has been studied by deep level transient spectroscopy. The thermal activation energy was 0.24 eV, and the trap concentration was related to Te-dopant concentration. The deep level concentration strongly increased with elevating Te-dopant concentration. Meanwhile, the trap distribution profile also presented the same distribution behavior as the Te concentration profile. Therefore, the deep level in Te-doped AlInP is verified to be a dopant-related defect.
URI:	http://hdl.handle.net/11536/31191
ISSN:	0021-4922
期刊:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume:	38
Issue:	8
起始頁:	4720
結束頁:	4721
Appears in Collections:	Articles

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