Application of plasma immersion ion implantation doping to low-temperature processed poly-Si TFT's

Abstract

This work applied, for the first time, plasma immersion ion implantation (PIII) for source/drain doping on low-temperature processed polysilicon thin-film transistors (poly-Si TFT's), Experimental results indicate that PIII doping can provide adequate dopant concentration and junction depth for source/drain. In addition, H-2-diluted phosphorus pill can promote dopant activation more efficiently during RTA at 600 degrees C than with conventional ion implantation (II) technology. The excellent characteristics of PIII doped poly-Si TFT's resemble those of conventional II doped ones.