標題: | Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention |
作者: | Tsai, C. Y. Lee, T. H. Cheng, C. H. Chin, Albert Wang, Hong 電機工程學系 Department of Electrical and Computer Engineering |
公開日期: | 22-Nov-2010 |
摘要: | We have fabricated the TaN-[SiO(2)-LaAlO(3)]-ZrON-[LaAlO(3)-SiO(2)]-Si charge-trapping flash device with highly scaled 3.6 nm equivalent-Si(3)N(4)-thickness. This device shows large 4.9 V initial memory window, and good retention of 3.4 V ten-year extrapolated retention window at 85 degrees C, under very fast 100 mu s and low +/- 16 V program/erase. These excellent results were achieved using deep traps formed in ZrON trapping layer by As(+) implantation that was significantly better than those of control device without ion implantation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3522890] |
URI: | http://dx.doi.org/10.1063/1.3522890 http://hdl.handle.net/11536/31918 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3522890 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 97 |
Issue: | 21 |
結束頁: | |
Appears in Collections: | Articles |
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