標題: Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention
作者: Tsai, C. Y.
Lee, T. H.
Cheng, C. H.
Chin, Albert
Wang, Hong
電機工程學系
Department of Electrical and Computer Engineering
公開日期: 22-Nov-2010
摘要: We have fabricated the TaN-[SiO(2)-LaAlO(3)]-ZrON-[LaAlO(3)-SiO(2)]-Si charge-trapping flash device with highly scaled 3.6 nm equivalent-Si(3)N(4)-thickness. This device shows large 4.9 V initial memory window, and good retention of 3.4 V ten-year extrapolated retention window at 85 degrees C, under very fast 100 mu s and low +/- 16 V program/erase. These excellent results were achieved using deep traps formed in ZrON trapping layer by As(+) implantation that was significantly better than those of control device without ion implantation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3522890]
URI: http://dx.doi.org/10.1063/1.3522890
http://hdl.handle.net/11536/31918
ISSN: 0003-6951
DOI: 10.1063/1.3522890
期刊: APPLIED PHYSICS LETTERS
Volume: 97
Issue: 21
結束頁: 
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