Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

doi:10.1109/LED.2010.2055828

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, C. H.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.contributor.author	Yeh, F. S.	en_US
dc.date.accessioned	2014-12-08T15:48:24Z	-
dc.date.available	2014-12-08T15:48:24Z	-
dc.date.issued	2010-09-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2010.2055828	en_US
dc.identifier.uri	http://hdl.handle.net/11536/32243	-
dc.description.abstract	Using novel stacked covalent-bond-dielectric GeO(x) (GeO) on metal-oxide SrTiO(3) to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an ultralow set power of small 4 mu W (3.5 mu A at 1.1 V), a reset power of 16 pW (0.12 nA at 0.13 V), and a large 10(6) memory window for 10(5)-s retention at 85 degrees C are realized for the first time. A positive temperature coefficient is measured at low-resistance state and different from the metallic filament in metal-oxide resistive random access memory.	en_US
dc.language.iso	en_US	en_US
dc.subject	GeO(2)	en_US
dc.subject	resistive random access memory (RRAM)	en_US
dc.subject	SrTiO(3) (STO)	en_US
dc.title	Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2010.2055828	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	31	en_US
dc.citation.issue	9	en_US
dc.citation.spage	1020	en_US
dc.citation.epage	1022	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000283185500040	-
dc.citation.woscount	13	-
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