標題: The Impact of Uni-axial Strain on Low Frequency Noise in Nanoscale p-Channel Metal-Oxide-Semiconductor Field Effect Transistors under Dynamic Body Biases
作者: Yeh, Kuo-Liang
Ku, Chih-You
Guo, Jyh-Chyurn
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Aug-2010
摘要: The impact of local strain on low frequency noise (LFN) in p-channel metal-oxide-semiconductor field effect transistor (pMOSFET) is investigated under dynamic body biases For 60 nm pMOSFET, the uni-axial compressive strain from embedded SiGe (e-SiGe) in source/drain can contribute 75% effective mobility (mu(eff)) enhancement and the proportional improvement in current (I(DS)) as well as transconductance (G(m)) However, the strained pMOSFET suffer more than 80% higher LFN (S(ID)/I(D)(2)) compared with the control pMOSFET free from strain engineering The measured LFN can be consistently explained by mobility fluctuation model and the increase of Hooge parameter (alpha(H)) appears as a key factor responsible for the higher LFN in strained pMOSFET Forward body biases (FBB) is proposed as an effective method adapted to nanoscale devices for improving mu(eff) and suppressing LFN, without resort to strain engineering (C) 2010 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.1143/JJAP.49.084201
http://hdl.handle.net/11536/32349
ISSN: 0021-4922
DOI: 10.1143/JJAP.49.084201
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 49
Issue: 8
結束頁: 
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