A novel process to form cobalt silicided p(+) poly-Si gates by BF2+ implantation into bilayered CoSi/a-Si films and subsequent anneal

標題:	A novel process to form cobalt silicided p(+) poly-Si gates by BF2+ implantation into bilayered CoSi/a-Si films and subsequent anneal
作者:	Lai, WK Liu, HW Juang, MH Chen, NC Cheng, HC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-Jul-1998
摘要:	A novel process that implants BF2+ ions into thin bilayered CoSi/a-Si films has been shown to form cobalt silicided pf poly-Si gates with excellent gate oxide integrity and very small flatband shift. The effects of not only using the CoSi layer as an implantation barrier but also keeping the a-Si underlayer during the initial silicide formation both significantly suppress the boron penetration through thin gate oxide.
URI:	http://dx.doi.org/10.1109/55.701436 http://hdl.handle.net/11536/32534
ISSN:	0741-3106
DOI:	10.1109/55.701436
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	19
Issue:	7
起始頁:	259
結束頁:	261
Appears in Collections:	Articles

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