完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Ker, MD | en_US |
dc.contributor.author | Wu, CY | en_US |
dc.contributor.author | Huang, CC | en_US |
dc.contributor.author | Chen, TY | en_US |
dc.date.accessioned | 2014-12-08T15:49:03Z | - |
dc.date.available | 2014-12-08T15:49:03Z | - |
dc.date.issued | 1998-06-01 | en_US |
dc.identifier.issn | 0038-1101 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/32595 | - |
dc.description.abstract | A new multiple-cell square-type layout design is proposed to realize the large-dimension output transistors for submicron low-voltage CMOS ICs. By using this layout design, the layout area of CMOS output buffers can be effectively reduced 30-40% with respect to the traditional finger-type layout. The drain-to-bulk parasitic capacitance of the output transistors is also reduced 40% by this square-type layout. Experimental results in a 0.6 mu m CMOS process have shown that the maximum driving (sinking) capability per unit layout area of a CMOS output buffer realized by the proposed multiple-cell square-type layout is improved 54% (34%) more than that by the traditional finger-type layout. The human-body-model (machine-model) ESD robustness per unit layout area of the CMOS output buffer realized by the proposed multiple-cell square-type layout is increased 25.2% (17.3%) as comparing to that by the traditional finger-type layout. (C) 1998 Published by Elsevier Science Ltd. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Multiple-cell square-type layout design for output transistors in submicron CMOS technology to save silicon area | en_US |
dc.type | Article | en_US |
dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
dc.citation.volume | 42 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 1007 | en_US |
dc.citation.epage | 1014 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000074542500020 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |