標題: CHARACTERIZATION OF ULTRATHIN OXIDE PREPARED BY LOW-TEMPERATURE WAFER LOADING AND NITROGEN PREANNEALING BEFORE OXIDATION
作者: WU, SL
LEE, CL
LEI, TF
LIANG, MS
電子工程學系及電子研究所
電控工程研究所
Department of Electronics Engineering and Institute of Electronics
Institute of Electrical and Control Engineering
公開日期: 15-Aug-1992
摘要: In this study, we report a high-performance ultrathin oxide (almost-equal-to 80 angstrom) prepared by a low-temperature wafer loading and N2 preannealing before oxidation. This recipe can reduce native oxide thickness and thermal stress compared to the conventional oxidation recipe. The high-resolution transmission electron microscopy reveals that the SiO2/Si interface is atomically flat, and a thin crystalline-like oxide layer about 7 angstrom exists at the interface. Oxides prepared by the proposed recipe show a very high dielectric breakdown field (greater-than-or-equal-to 16 MV/cm) and a very low interface state density (N(it) almost-equal-to 3 X 10(9) eV-1 cm-2 at midgap). The effective barrier height at cathode derived from the slopes of log(J(g)/E2(ox)2 vs 1/E(ox) and t(bd) vs 1/E(ox) plots is about 3.9 eV, instead of 3.2 eV for the control sample. It also shows a better immunity to the charge trapping and interface state generation under high-field stressing, and superior time-dependent dielectric breakdown characteristics.
URI: http://dx.doi.org/10.1063/1.351749
http://hdl.handle.net/11536/3316
ISSN: 0021-8979
DOI: 10.1063/1.351749
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 72
Issue: 4
起始頁: 1378
結束頁: 1385
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