POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE FOR ELLIPSOMETRY MEASUREMENT

標題:	POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE FOR ELLIPSOMETRY MEASUREMENT
作者:	CHAO, TS LEE, CL LEI, TF YEN, YT 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	MEASUREMENT;THIN FILMS;ELLIPOSOMETRY
公開日期:	4-Jun-1992
摘要:	A multiple poly-oxide/poly-Si/SiO2/Si sandwiched structure is proposed for the conventional single incident angle and single wavelength ellipsometry measurement of the thicknesses and refractive indices of the poly-oxide and the poly-Si at the same time. The structure is simple and gives accurate results.
URI:	http://hdl.handle.net/11536/3385
ISSN:	0013-5194
期刊:	ELECTRONICS LETTERS
Volume:	28
Issue:	12
起始頁:	1144
結束頁:	1145
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.