EXCITON BINDING-ENERGY IN A GAAS/ALXGA1-XAS QUANTUM-WELL WITH UNIFORM ELECTRIC-FIELD

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DC 欄位	值	語言
dc.contributor.author	CHUU, DS	en_US
dc.contributor.author	SHIH, YT	en_US
dc.date.accessioned	2019-04-03T06:37:46Z	-
dc.date.available	2019-04-03T06:37:46Z	-
dc.date.issued	1991-10-15	en_US
dc.identifier.issn	2469-9950	en_US
dc.identifier.uri	http://dx.doi.org/10.1103/PhysRevB.44.8054	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3657	-
dc.description.abstract	The effects of a uniform electric field on the binding energies of excitons and the subband energies in a GaAs/AlxGa1-xAs quantum well are studied by a perturbative variational approach. Our calculation is based on an effective-width infinite-well model. The effective-mass mismatch is also taken into account. Our results show that the electric field causes a large shift of the subband energy and exciton peak position. The calculated results are compared with the data observed from an optical-absorption experiment. Satisfactory agreement is obtained.	en_US
dc.language.iso	en_US	en_US
dc.title	EXCITON BINDING-ENERGY IN A GAAS/ALXGA1-XAS QUANTUM-WELL WITH UNIFORM ELECTRIC-FIELD	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1103/PhysRevB.44.8054	en_US
dc.identifier.journal	PHYSICAL REVIEW B	en_US
dc.citation.volume	44	en_US
dc.citation.issue	15	en_US
dc.citation.spage	8054	en_US
dc.citation.epage	8060	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:A1991GK72800030	en_US
dc.citation.woscount	13	en_US
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