NUMERICAL-ANALYSIS OF THE FREQUENCY-DEPENDENT OUTPUT CONDUCTANCE OF GAAS-MESFETS

doi:10.1109/16.119003

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DC 欄位	值	語言
dc.contributor.author	LO, SH	en_US
dc.contributor.author	LEE, CP	en_US
dc.date.accessioned	2014-12-08T15:05:11Z	-
dc.date.available	2014-12-08T15:05:11Z	-
dc.date.issued	1991-08-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/16.119003	en_US
dc.identifier.uri	http://hdl.handle.net/11536/3714	-
dc.description.abstract	The small-signal output conductance of GaAs MESFET's on semi-insulating substrate has been studied using two-dimensional numerical analysis. Frequency-, temperature-, and drain-bias-dependent behaviors of the output conductance are analyzed. It is confirmed that the bulk EL2 traps contribute significantly to the low-frequency-dependent behavior of the output conductance. Devices with different background trap concentration and acceptor concentration have been analyzed and compared. For devices with higher trap concentration and higher acceptor concentration, the output conductance is lower but exhibits stronger frequency dependence.	en_US
dc.language.iso	en_US	en_US
dc.title	NUMERICAL-ANALYSIS OF THE FREQUENCY-DEPENDENT OUTPUT CONDUCTANCE OF GAAS-MESFETS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/16.119003	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	38	en_US
dc.citation.issue	8	en_US
dc.citation.spage	1693	en_US
dc.citation.epage	1700	en_US
dc.contributor.department	物理研究所	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Physics	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1991FW96400002	-
dc.citation.woscount	7	-
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