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dc.contributor.authorLO, SHen_US
dc.contributor.authorLEE, CPen_US
dc.date.accessioned2014-12-08T15:05:11Z-
dc.date.available2014-12-08T15:05:11Z-
dc.date.issued1991-08-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.119003en_US
dc.identifier.urihttp://hdl.handle.net/11536/3714-
dc.description.abstractThe small-signal output conductance of GaAs MESFET's on semi-insulating substrate has been studied using two-dimensional numerical analysis. Frequency-, temperature-, and drain-bias-dependent behaviors of the output conductance are analyzed. It is confirmed that the bulk EL2 traps contribute significantly to the low-frequency-dependent behavior of the output conductance. Devices with different background trap concentration and acceptor concentration have been analyzed and compared. For devices with higher trap concentration and higher acceptor concentration, the output conductance is lower but exhibits stronger frequency dependence.en_US
dc.language.isoen_USen_US
dc.titleNUMERICAL-ANALYSIS OF THE FREQUENCY-DEPENDENT OUTPUT CONDUCTANCE OF GAAS-MESFETSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.119003en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume38en_US
dc.citation.issue8en_US
dc.citation.spage1693en_US
dc.citation.epage1700en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1991FW96400002-
dc.citation.woscount7-
Appears in Collections:Articles


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