NEAR-INFRARED TRANSMISSION MEASUREMENT OF EL2 CONCENTRATION IN SEMIINSULATING GAAS WAFERS WITH A LASER DIODE (LAMBDA=1.3-MU-M)

標題:	NEAR-INFRARED TRANSMISSION MEASUREMENT OF EL2 CONCENTRATION IN SEMIINSULATING GAAS WAFERS WITH A LASER DIODE (LAMBDA=1.3-MU-M)
作者:	PAN, CL WU, HH HSIEH, TR 交大名義發表光電工程學系 National Chiao Tung University Department of Photonics
公開日期:	1-Jul-1991
摘要:	We demonstrated a near-infrared transmittance setup for EL2 concentration mapping in undoped semi-insulating (SI) GaAs wafers. The light source was a power-stabilized laser diode (lambda = 1.3-mu-m) operating in the light emitting diode (LED) mode. The sensitivity of the apparatus was as low as 10(14) cm-3 for typical commerical wafers 350-mu-m in thickness.
URI:	http://hdl.handle.net/11536/3749
ISSN:	0021-4922
期刊:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume:	30
Issue:	7
起始頁:	1430
結束頁:	1431
Appears in Collections:	Articles

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