ENHANCEMENT OF CF4 AND O2 REACTIVE ION ETCHING RESISTANCE OF POLY(BUTENE-1 SULFONE) BY N2 PLASMA PRETREATMENT

標題:	ENHANCEMENT OF CF4 AND O2 REACTIVE ION ETCHING RESISTANCE OF POLY(BUTENE-1 SULFONE) BY N2 PLASMA PRETREATMENT
作者:	LOONG, WA CHANG, HW 交大名義發表應用化學系 National Chiao Tung University Department of Applied Chemistry
關鍵字:	PLASMAS;PHOTOLITHOGRAPHY;SEMICONDUCTOR DOPING;SEMICONDUCTOR GROWTH
公開日期:	14-Mar-1991
摘要:	The resistance of poly(butene-1 sulfone) (PBS) to CF4 and oxygen reactive ion etching is greatly enhanced by low power nitrogen plasma pretreatment. The original thickness of PBS can be maintained.
URI:	http://hdl.handle.net/11536/3837
ISSN:	0013-5194
期刊:	ELECTRONICS LETTERS
Volume:	27
Issue:	6
起始頁:	541
結束頁:	542
Appears in Collections:	Articles

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.