標題: | ENHANCEMENT OF CF4 AND O2 REACTIVE ION ETCHING RESISTANCE OF POLY(BUTENE-1 SULFONE) BY N2 PLASMA PRETREATMENT |
作者: | LOONG, WA CHANG, HW 交大名義發表 應用化學系 National Chiao Tung University Department of Applied Chemistry |
關鍵字: | PLASMAS;PHOTOLITHOGRAPHY;SEMICONDUCTOR DOPING;SEMICONDUCTOR GROWTH |
公開日期: | 14-三月-1991 |
摘要: | The resistance of poly(butene-1 sulfone) (PBS) to CF4 and oxygen reactive ion etching is greatly enhanced by low power nitrogen plasma pretreatment. The original thickness of PBS can be maintained. |
URI: | http://hdl.handle.net/11536/3837 |
ISSN: | 0013-5194 |
期刊: | ELECTRONICS LETTERS |
Volume: | 27 |
Issue: | 6 |
起始頁: | 541 |
結束頁: | 542 |
顯示於類別: | 期刊論文 |