Advance in next Century nanoCMOSFET research

Title:	Advance in next Century nanoCMOSFET research
Authors:	Hwang, Huey-Liang Chiou, Yan-Kai Chang, Che-Hao Wang, Chen-Chan Lee, Kun-Yu Wu, Tai-Bor Kwo, Raynien Hong, Minghwei Chang-Liao, Kuei-Shu Lu, Chun-Yuan Lu, Chun-Chang Chiu, Fu-Chien Chen, Chun-Heng Lee, Joseph Ya-Min Chin, Albert 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	nano;MOSFET;high-k dielectric;metal gate
Issue Date:	31-Oct-2007
Abstract:	It is well known that Taiwan's IC industry is in the very leading front of the world, and production of 65 nm devices was launched in 2006. Within a few years, the need of high-k dielectrics and metal gates is eminent and truly indispensable. Professor H.L. Hwang (the author) organized 12 professors and 50 graduate students of National Tsing Hua University and Chiao Tung University, and executed this particular project, which is sponsored by the Ministry of Economic Affairs of Republic of China, and is aimed at treating efficiently this problem and transferred the critical technologies to industry in a time frame of 3 years. (C) 2007 Elsevier B.V. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.apsusc.2007.07.117 http://hdl.handle.net/11536/3896
ISSN:	0169-4332
DOI:	10.1016/j.apsusc.2007.07.117
Journal:	APPLIED SURFACE SCIENCE
Volume:	254
Issue:	1
Begin Page:	236
End Page:	241
Appears in Collections:	Conferences Paper

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