标题: | 靴带式之宽动态范围4T架构CMOS生医影像感测器 Biomedical CMOS Image Sensor with 4T Architecture and Bootstrap Dynamic Range Improvement |
作者: | 李俊彦 Lee, Chun-Yen 林进灯 Lin, Chin-Teng 电机学院IC设计产业专班 |
关键字: | CMOS影像感测器;填满因素;动态范围;CMOS Image Sensor;Fill Factor;Dynamic Range |
公开日期: | 2008 |
摘要: | 近几年CMOS影像感测器发展应市场需求有着蓬勃发展,不论是在3C消费型产品、车用电子产品与生医电子产品,如手机照相机、视讯摄影机、Wii游戏机、倒车侦测器、胶囊内视镜、可穿戴环型感测器以及生医待测物侦测。CMOS影像感测器较CCD感测器有着易于作系统晶片整合,且拥有低电压、低面积以及低功耗之优势。 本论文设计一高动态范围之生医CMOS影像感测器用以侦测生医待测物,生医影像感测器之架构分为类比前端影像感测部分与数位控制讯号部分,首先类比部分采用4T架构之主动像素影像感测器(Active Pixel Sensor,APS)、靴带式(Bootstrap)电路与相关双取样电路(Correlated Double Sample,CDS),数位部份用以产生不同周期讯号用来控制内部行列阵列,采用全客户式CMOS电路来实现多工器(Multiplexer)、解多工器(Deultiplexer)以及计数器(Counter)来实现。 本晶片采用TSMC 0.18μm CMOS 1P6M混合讯号制程技术,整体面积为2.57×2.7 ,生医影像感测器阵列大小为32×32共1024细胞感测器,晶片之供应电压为1.5V整体功耗为5.97mW,光二极体采用n+井/P基座,填满因素达56.75%,动态范围高达90.3dB。 CMOS image sensors have drawn much high-tech product market’s attention in recent year. The products apply to 3C consumer type, automotive application and biomedical CMOS image sensor. Such products are cell-phone cameras, video cameras, Wii game boxes, park assist systems, smart pills, wearable ring sensors and biomedical subject detection sensors. In comparison with charge coupled devices (CCD), CMOS image sensor demonstrates great circuit integration capability, low voltage, low area and low power consumption design. In this thesis, the biomedical CMOS image sensor (BIOCIS) with high dynamic range are proposed and designed into a chip that detects subject. This sensor structure comprises the analog part used to sense front image signals and the digital part exploited to control some digital signals. To illustrate, the analog part design is composed of 4-T Active Pixel Sensor (APS), bootstrap circuit, Correlated Double Sample (CDS), while the digital part design is constructed by full custom to realize multiplexers, deultiplexers and counters. This BIOCIS chip is fabricated TSMC 0.18μm COMS Mixed-Signal RF General purpose MiM Al 1P6M 1.8&3.3V process and occupies the area of 2.57×2.7 . BIOCIS has 1024 pixel cell sensors and pixel array 32×32. The total power consumption is about 5.97mW under 1.5V supply voltage. The photodiode structure use n+/p-substrate type, fill factor of 56.75% and high dynamic range of 90.3dB. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT009595507 http://hdl.handle.net/11536/40131 |
显示于类别: | Thesis |
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