Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | WANG, YH | en_US |
| dc.contributor.author | YARN, KF | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.date.accessioned | 2014-12-08T15:05:34Z | - |
| dc.date.available | 2014-12-08T15:05:34Z | - |
| dc.date.issued | 1990-05-01 | en_US |
| dc.identifier.issn | 0947-8396 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/4110 | - |
| dc.language.iso | en_US | en_US |
| dc.title | INVESTIGATION OF 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICES PREPARED BY MOLECULAR-BEAM EPITAXY | en_US |
| dc.type | Article | en_US |
| dc.identifier.journal | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | en_US |
| dc.citation.volume | 50 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 485 | en_US |
| dc.citation.epage | 493 | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.identifier.wosnumber | WOS:A1990DA55500006 | - |
| dc.citation.woscount | 1 | - |
| Appears in Collections: | Articles | |
- A NOVEL 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY / WANG, YH;YARN, KF;CHANG, CY
- GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURES / YARN, KF;WANG, YH;CHANG, CY
- A NOVEL DIAC-LIKE SWITCH USING DOUBLE TRIANGULAR BARRIERS / YARN, KF;WANG, YH;CHANG, CY
- NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY / YARN, KF;WANG, YH;CHANG, CY
- ROOM-TEMPERATURE OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL RESISTANCE DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY / YARN, KF;WANG, YH;CHANG, CY
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