INVESTIGATION OF 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICES PREPARED BY MOLECULAR-BEAM EPITAXY

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WANG, YH	en_US
dc.contributor.author	YARN, KF	en_US
dc.contributor.author	CHANG, CY	en_US
dc.date.accessioned	2014-12-08T15:05:34Z	-
dc.date.available	2014-12-08T15:05:34Z	-
dc.date.issued	1990-05-01	en_US
dc.identifier.issn	0947-8396	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4110	-
dc.language.iso	en_US	en_US
dc.title	INVESTIGATION OF 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICES PREPARED BY MOLECULAR-BEAM EPITAXY	en_US
dc.type	Article	en_US
dc.identifier.journal	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING	en_US
dc.citation.volume	50	en_US
dc.citation.issue	5	en_US
dc.citation.spage	485	en_US
dc.citation.epage	493	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1990DA55500006	-
dc.citation.woscount	1	-
顯示於類別：	期刊論文