鑽石修整器修整特性對化學機械研磨製程的細微刮傷缺陷之影響

Abstract

隨著積體電路電子元件的蓬勃發展，為了有效提高產能以及降低成本，在半導體製程上會朝向提高深寬比且日趨積層化以及微細化，因此晶圓表面的平坦化就變的越趨重要。平坦化的技術包括SOG (Spin on Glass)、Re-flow‚ Etch Back等，這些方法都只能達到局部的平坦化的效果而已，在高階的製程(如0.25微米以下)就已經全面使用化學機械拋光的技術來達到全面平坦化的效果。 研磨墊修整器(Pad Dresser)為CMP製程維持長時間穩定晶圓移除率和均勻性的關鍵組件，但對於修整器上鑽石磨粒之排列、晶型、尺寸大小對磨削多孔性研磨墊材料基本磨削移除率(cutting Rate)以及研磨墊表面粗糙度(Ra & Rz)與細微刮傷缺陷(micro-scratch)的關聯，截至目前為止仍未有文獻對此基本過程進行實驗觀察。 因此本研究以自行設計的實驗深入觀察不同鑽石排列間距、鑽石尺寸以及鑽石晶型之修整器，在相同條件下犁削研磨墊,並測量研磨墊的深度以及表面粗糙度，歸納出多孔性研磨墊材料被不同研磨墊修整器來磨削時研磨墊耗損率及研磨墊表面粗糙度，及其對CMP製程細微刮傷缺陷率(defect rate)的影響，希望經由此一研究獲得適當且穩定的修整器，進而提升CMP製程能力，降低細微刮傷缺陷率，進而提升良率並降低製程成本。

With the vigorous development of the integrated circuit electronic components, in order to effectively increase productivity and reduce costs, the aspect ratio in the semiconductor manufacturing process is raised and the chip design become laminated and miniaturization, so the wafer surface planarization becomes increasingly important. Planarization techniques include SOG (Spin on Glass), Re-flow, Etch Back, these methods only achieve partial flattening effect, In the order of the manufacturing process (such as 0.25 microns or less) has been full use of chemical-mechanical polishing techniques to achieve full planarization effect. Abrasive pad dresser (Pad Dresser) maintain long stable wafer removal rate and uniformity of the key components of CMP process, but for the arrangement of diamond abrasive grains on the trimmer, crystal type, the size of grinding the porous polishing pad material the basic grinding removal rate (Cutting Rate) and the polishing pad surface roughness (Ra and Rz) of subtle scratches defects (micro-scratch) associated, so far there is no literature experimental observation of this basic process. Therefore, this study own insight into the design of experimental in different dresser diamond arrangement pitch,size and polymorph plow under the same conditions the process of the polishing pad, and measuring the depth of the polishing pad and the polishing pad surface roughness summed porous grinding depletion rate pad material different polishing pad dresser to the grinding polishing pad and polishing pad surface roughness, and its CMP process micro-scratch defect rate (defect rate).Appropriate and stable dresser, hope through this study to enhance the ability of CMP process, reduce the defect rate of minor scratches, and thus enhance the yield and reduce the cost of the process.