Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | WANG, YH | en_US |
| dc.contributor.author | YARN, KF | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.date.accessioned | 2014-12-08T15:05:43Z | - |
| dc.date.available | 2014-12-08T15:05:43Z | - |
| dc.date.issued | 1989-12-20 | en_US |
| dc.identifier.issn | 0040-6090 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/0040-6090(89)90246-0 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/4246 | - |
| dc.language.iso | en_US | en_US |
| dc.title | A NOVEL 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1016/0040-6090(89)90246-0 | en_US |
| dc.identifier.journal | THIN SOLID FILMS | en_US |
| dc.citation.volume | 182 | en_US |
| dc.citation.issue | en_US | |
| dc.citation.spage | 87 | en_US |
| dc.citation.epage | 95 | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.identifier.wosnumber | WOS:A1989CK15500009 | - |
| dc.citation.woscount | 0 | - |
| Appears in Collections: | Articles | |
- INVESTIGATION OF 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICES PREPARED BY MOLECULAR-BEAM EPITAXY / WANG, YH;YARN, KF;CHANG, CY
- NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY / YARN, KF;WANG, YH;CHANG, CY
- ROOM-TEMPERATURE OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL RESISTANCE DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY / YARN, KF;WANG, YH;CHANG, CY
- GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURES / YARN, KF;WANG, YH;CHANG, CY
- A NOVEL DIAC-LIKE SWITCH USING DOUBLE TRIANGULAR BARRIERS / YARN, KF;WANG, YH;CHANG, CY
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