奈米級金氧半場效電晶體之通道背向式散射係數萃取

Abstract

閘極氧化層厚度為1.65奈米的N-型通道金氧半電晶體，在靠近源極的kBT layer內之通道背向式散射係數被分為兩個要素探討：背向式散射在半熱平衡狀態下的平均自由路徑，以及kBT layer 的寬度。另外確認此分離方法正確性的證據也更進一步提出：(i) 靠近源極的導帶概觀圖; (ii) 另一個透過跟溫度有關的汲極電流公式來求得背向式散射係數的方法。這些發現彼此之間更具有相當的一致性，並支持著背向式散射確實是此係數的起源。因此，我們可以合理的宣稱：這些被分離的要素，以及相對應與溫度及偏壓的關係，可以被適宜地用以描述在通道背向式散射理論架構之下運作的元件操作情形。

Channel backscattering coefficients in the kBT layer (near the source) of 1.65-nm thick gate oxide n-channel MOSFETs are systematically separated into two distinct components: the quasi-thermal-equilibrium mean-free-path for backscattering and the width of the kBT layer. Evidence to confirm the validity of the separation procedure is further produced: (i) the near-source channel conduction-band profile; and (ii) an analytic temperature-dependent drain current model for the channel backscattering coefficients. The findings are also consistent with each other and therefore corroborate channel backscattering as the origin of the coefficients. Consequently, it can be reasonably claimed that the separated components, as well as their dependencies on temperature and bias, are adequate while being used to describe the operation of the devices undertaken within the framework of the channel backscattering theory.