A NEW CRITERION FOR TRANSIENT LATCHUP ANALYSIS IN BULK CMOS

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DC Field	Value	Language
dc.contributor.author	YANG, YH	en_US
dc.contributor.author	WU, CY	en_US
dc.date.accessioned	2014-12-08T15:05:48Z	-
dc.date.available	2014-12-08T15:05:48Z	-
dc.date.issued	1989-07-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/16.30939	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4338	-
dc.language.iso	en_US	en_US
dc.title	A NEW CRITERION FOR TRANSIENT LATCHUP ANALYSIS IN BULK CMOS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/16.30939	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	36	en_US
dc.citation.issue	7	en_US
dc.citation.spage	1336	en_US
dc.citation.epage	1347	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1989U953200013	-
dc.citation.woscount	6	-
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