THE EFFECT OF LAYOUT, SUBSTRATE WELL BIASES, AND TRIGGERING SOURCE LOCATION ON LATCHUP TRIGGERING CURRENTS IN BULK CMOS CIRCUITS

Full metadata record

DC Field	Value	Language
dc.contributor.author	YANG, YH	en_US
dc.contributor.author	WU, CY	en_US
dc.date.accessioned	2014-12-08T15:05:51Z	-
dc.date.available	2014-12-08T15:05:51Z	-
dc.date.issued	1989-04-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4389	-
dc.language.iso	en_US	en_US
dc.title	THE EFFECT OF LAYOUT, SUBSTRATE WELL BIASES, AND TRIGGERING SOURCE LOCATION ON LATCHUP TRIGGERING CURRENTS IN BULK CMOS CIRCUITS	en_US
dc.type	Article	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	32	en_US
dc.citation.issue	4	en_US
dc.citation.spage	269	en_US
dc.citation.epage	279	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1989U203600002	-
dc.citation.woscount	0	-
Appears in Collections:	Articles