矽晶片上薄膜之應力減輕

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DC Field	Value	Language
dc.contributor.author	劉國賓	en_US
dc.contributor.author	LIU, GUO-BIN	en_US
dc.contributor.author	陳茂傑	en_US
dc.contributor.author	雷添福	en_US
dc.contributor.author	蘇翔	en_US
dc.contributor.author	CHEN, MAO-JIE	en_US
dc.contributor.author	LEI, TIAN-FU	en_US
dc.contributor.author	SU, XIANG	en_US
dc.date.accessioned	2014-12-12T02:05:24Z	-
dc.date.available	2014-12-12T02:05:24Z	-
dc.date.issued	1988	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT772123040	en_US
dc.identifier.uri	http://hdl.handle.net/11536/53694	-
dc.description.abstract	低壓沈積的多晶矽薄膜之應力與其沈積的過程有關。經過熱處理或是雜質擴散的多晶矽薄膜其應力會產生得明顯的變化，並且可以很確實地降低了多晶矽薄膜的應力。低壓沈積之Ｓｉ□Ｎ在矽晶片產生的應力和其沈積速率有關，速率愈高所伴隨的應力愈大。所以低成長速率是降低Ｓｉ□Ｎ應力的一種方法。	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	矽晶片	zh_TW
dc.subject	應力	zh_TW
dc.subject	薄膜	zh_TW
dc.subject	沈積速率	zh_TW
dc.title	矽晶片上薄膜之應力減輕	zh_TW
dc.type	Thesis	en_US
dc.contributor.department	光電工程學系	zh_TW
Appears in Collections:	Thesis