垂直發射的雷射封裝結構之製作

Abstract

本研究係利用矽之異方性蝕刻技術，在矽晶片上製作一種具有四十五度斜 面之Ｕ型槽，並利用此種氧化犧牲法，使斜面更平整至光學程度，在此結 構上黏置邊射型半導體雷射，使其達到垂直發射的功能。此種垂直發射之 結構十分簡化雷射包裝的方式，有利於自動化的優點。 This thesis is to study a novel technology of the fabrication of a vertical emitting semiconductor laser.this technique is a combination of an edge emitting semiconductor laser and a silicon micro-machining U-groove which has forty-five degree mirror-like oblique planes made by oxidation-smooth method.With the edge emitting semiconductor laser packaged on the bottom of the U-groove,reflected light will be perpendicular to the incident light,that is,as a vertical emitting semiconductor laser.This vertical emitting structure with simplifying laser package has the advantage for automation.