快速加熱化學氣相沉積在積體電路製程應用之研究

Abstract

本論文在探討快速加熱化學氣相沉積多晶矽之各種特性。各種不同沉積溫 度，壓力和反應氣體流量對於多晶矽薄膜沉積之均勻性都有詳細探討。在 本文中並且首次探討以快速加熱化學氣相沉積之氮元素摻雜多晶矽。氮元 素之濃度對於多晶矽薄膜沉積速率和薄膜特性都有影響。 In this work, the characteristics of rapid thermal chemical vapor deposition of undoped polysilicon have been studied. The effects of deposition temperature, pressure and reaction gas flow rate on the uniformity of polysilicon films are presented in details. Nitrogen-doped polysilicon prepared by RTCVD was investigated to the best of our knowldge, for the first time. SIMS was used to examine nitrogen concentration in the RTCVD polysilicon. The deposition rate and incubation time are strong functions of nitrogen concentration. Nitrogen-doped polysilicon layer has shown to be an excellent boron peneration barrier for P+ polysilicon gate, base on the MOS capacitor electrical data and SIMS boron profiles. A NICER (Nitrogen Incorporation into CMOS Gate Electrode by RTCVD) technology using nitrogen-doped RTCVD polysilicon and N2O gate dielectrics is described as the potential candidate for the next generation deep submicron CMOS process. This new process is ideal for the future cluster-type equipment.