電漿製程對金氧半場效電晶體特性衰退的影響與模擬

Abstract

首先對不同的電漿製程, 測量電晶體加入應力電流之後的特性衰退情形, 以萃取介面能態與氧化層陷井。再對各種不同的天線比例分析天線效應與 介面能態與氧化層陷井之間的關係。最後, 以一個等效電路模擬介面能態 與應力時間及天線比例之間的關係, 做為電路設計者的參考。 At first, for different plasma process, measure the degrad- ation of MOSFET which is applied stress current to extract interface states and oxide traps. Then the relation between antenna ratio and antenna effect, interface states, oxide traps is analized. Finally, a equivalent circuit is used to simulate the relation between interface states,stress time and antenna ratio. This could be used as reference for circuit designer.